msmp6.0a thru msmp20a www.vishay.com vishay general semiconductor revision: 10-dec-13 1 document number: 89457 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount t rans z orb ? transient voltage suppressors typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for protecting sensitive equipment against transient overvoltages. features ? very low profile - typical height of 0.65 mm ? ideal for automated placement ? oxide planar chip junction ? uni-directional polarity only ? peak pulse power: 150 w (10/1000 s) ? esd capability: 15 kv (air), 8 kv (contact) ? meets msl level 1, per j-std- 020c, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 mechanical data case: microsmp ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-fr ee, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end ? ? ? notes (1) non-repetitive curren t pulse, per fig. 1 (2) mounted on 6.0 mm x 6.0 mm copper pads to each terminal (3) mounted on minimum r ecommended pad layout primary characteristics v br 6.67 v to 24.5 v v wm 6.0 v to 20 v p ppm (10 x 1000 s) 150 w t j max. 150 c polarity uni-directional package microsmp microsmp esmp ? series top view bottom view maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak power dissi pation with a 10/1000 s waveform (fig. 1) p ppm (1)(2) 150 w peak pulse current with a 10/1000 s waveform i ppm (1) see next table a power dissipation t m = 120 c p d (2) 1.0 w power dissipation t a = 25 c p d (3) 0.5 operating junction and storage temperature range t j , t stg - 55 to + 150 c
msmp6.0a thru msmp20a www.vishay.com vishay general semiconductor revision: 10-dec-13 2 document number: 89457 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fi g. 1 and derate per fig. 3 (3) to calculate maximum clamping voltage at surge current uses the following formula: v cl max. = r d x i pp + v br max. notes (1) free air, mounted on recommended pcb 1 oz. pad area; thermal resistance r ? ja - junction to ambient (2) units mounted on pcb with 6.0 mm x 6.0 mm coppe r pad areas; r ? jm - junction to mount notes (1) immunity to iec 61000-4-2 ai r discharge mode has a ty pical perfor mance > 30 kv (2) system esd standard electrical characteristics (t a = 25 c unless otherwise noted) device ? type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage current i r at v wm (a) maximum v c at i ppm r d maximum v c at i ppm r d 10/1000 s 8/20 s min. max. v c (v) i ppm (a) r d ( ? )v c (v) i ppm (a) r d ( ? ) msmp6.0a ag 6.67 7.37 10 6.0 200 10.3 14.6 0.201 13.7 73.0 0.087 msmp6.5a ak 7.22 7.98 10 6.5 100 11.2 13.4 0.240 14.5 69.0 0.095 msmp7.0a am 7.78 8.60 10 7.0 50 12.0 12.5 0.272 15.7 63.7 0.111 msmp7.5a ap 8.33 9.21 1.0 7.5 50 12.9 11.6 0.317 17.0 58.8 0.132 msmp8.0a ar 8.89 9.83 1.0 8.0 20 13.6 11.0 0.342 18.2 54.9 0.152 msmp8.5a at 9.44 10.4 1.0 8.5 2.0 14.4 10.4 0.384 19.5 51.3 0.177 msmp9.0a av 10.0 11.1 1.0 9.0 2.0 15.4 9.7 0.441 20.6 48.6 0.195 msmp10a ax 11.1 12.3 1.0 10 1.0 17.0 8.8 0.533 21.7 46.1 0.204 msmp11a az 12.2 13.5 1.0 11 1.0 18.2 8.2 0.570 24.4 41.0 0.266 msmp12a be 13.3 14.7 1.0 12 1.0 19.9 7.5 0.690 25.3 39.5 0.268 msmp13a bg 14.4 15.9 1.0 13 1.0 21.5 7.0 0.803 27.2 36.8 0.307 msmp14a bk 15.6 17.2 1.0 14 1.0 23.2 6.5 0.928 29.5 33.9 0.364 msmp15a bm 16.7 18.5 1.0 15 1.0 24.4 6.2 0.960 32.5 30.8 0.455 msmp16a bp 17.8 19.7 1.0 16 1.0 26.0 5.8 1.092 34.7 28.8 0.520 MSMP17A br 18.9 20.9 1.0 17 1.0 27.6 5.4 1.233 36.8 27.2 0.586 msmp18a bt 20.0 22.1 1.0 18 1.0 29.2 5.1 1.382 39.3 25.4 0.676 msmp20a bv 22.2 24.5 1.0 20 1.0 32.4 4.6 1.706 42.8 23.4 0.783 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance r ? ja (1) 250 c/w r ? jm (2) 30 immunity to static electrical di scharge to the following standards ? (t a = 25 c unless otherwise noted) standard test type test conditions symbol class value aec-q101-001 human body model (con tact mode) c = 100 pf, r = 1.5 k ? v c h3b > 8 kv iec 61000-4-2 (2) human body model (a ir discharge mode) (1) c = 150 pf, r = 330 ? 4 > 15 kv ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode msmp6.0a-m3/89a 0.006 89a 4500 7" di ameter plastic tape and reel
msmp6.0a thru msmp20a www.vishay.com vishay general semiconductor revision: 10-dec-13 3 document number: 89457 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - pulse waveform fig. 2 - peak pulse power rating curve fig. 3 - pulse power or current vs. initial junction temperature fig. 4 - typical junction capacitance fig. 5 - power dissip ation derating curve fig. 6 - typical tran sient thermal impedance 0 0 50 100 150 1.0 2.0 3.0 4.0 t r = 10 s t r = 8 s t d = 1000 s t d = 20 s i ppm - peak pul s e current (% i r s m ) t - time (m s ) t d peak value i ppm half value - i ppm i pp 2 t j = 25 c pul s e width (t d ) i s defined a s the point where the peak current decay s to 50 % of i ppm 0.1 0.01 0.1 1 10 100 1 10 100 1000 10 000 p ppm - peak pul s e power (kw) t d - pul s e width ( s ) 0.24 " x 0.24 " (6.0 mm x 6.0 mm) copper pad area s non-repetitive pul s e waveform s hown in fig. 1 t a = 25 c 50 75 100 25 0 0 50 75 100 125 175 peak pul s e power (p pp ) or current (i pp ) derating in percentage (%) t j - initial temperature (c) 25 150 10 100 1000 6 8 10 12 14 16 18 20 c j - junction capacitance (pf) v wm - rever s e s tand-off voltage (v) mea s ured at s tand-off voltage, v wm mea s ured at zero bia s t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.0 0.2 0.4 0.6 0.8 1.0 1.2 50 0 100 150 175 ambient temperature (c) p d - power di ss ipation (w) 25 75 125 mounted on minimum recommende pad area t a = t m , mounted on 6.0 mm x 6.0 mm copper pad 1000 100 10 0.1 0.01 1 10 100 1000 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) junction to ambient
msmp6.0a thru msmp20a www.vishay.com vishay general semiconductor revision: 10-dec-13 4 document number: 89457 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) 0.106 (2.70) 0.091 (2.30) 0.055 (1.40) 0.047 (1.20) cathode band micro s mp 0.030 (0.75) 0.022 (0.55) 0.030 (0.75) 0.022 (0.55) 0.059 (1.50) 0.043 (1.10) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.020 (0.50) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.079 (2.00) 0.032 (0.80) 0.032 (0.80) mountin g pad layout 0.029 (0.73) 0.025 (0.63)
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